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1/13 june 2002 stp9nk60z - STP9NK60ZFP stb9nk60z - stb9nk60z-1 n-channel 600v - 0.85 w - 7a to-220/fp/d 2 pak/i 2 pak zener-protected supermesh?power mosfet n typical r ds (on) = 0.85 w n extremely high dv/dt capability n improved esd capability n 100% avalanche rated n gate charge minimized n very low intrinsic capacitances n very good manufacturing repeatibility description the supermesh? series is obtained through an extreme optimization of sts well established strip- based powermesh? layout. in addition to pushing on-resistance significantly down, special care is tak- en to ensure a very good dv/dt capability for the most demanding applications. such series comple- ments st full range of high voltage mosfets in- cluding revolutionary mdmesh? products. applications n high current, high speed switching n ideal for off-line power supplies, adaptors and pfc ordering information type v dss r ds(on) i d pw stp9nk60z STP9NK60ZFP stb9nk60z stb9nk60z-1 600 v 600 v 600 v 600 v < 0.95 w < 0.95 w < 0.95 w < 0.95 w 7 a 7 a 7 a 7 a 125 w 30 w 125 w 125 w sales type marking package packaging stp9nk60z p9nk60z to-220 tube STP9NK60ZFP p9nk60zfp to-220fp tube stb9nk60z b9nk60z d 2 pak tube stb9nk60zt4 b9nk60z d 2 pak tape & reel stb9nk60z-1 b9nk60z-1 i 2 pak tube to-220 to-220fp 1 2 3 1 2 3 1 3 i 2 pak d 2 pak internal schematic diagram .com .com .com .com 4 .com u datasheet
stp9nk60z / STP9NK60ZFP / stb9nk60z / stb9nk60z-1 2/13 absolute maximum ratings ( l ) pulse width limited by safe operating area (1) i sd 7a, di/dt 200 a, v dd v (br)dss , t j t jmax. (*) limited only by maximum temperature allowed thermal data avalanche characteristics gate-source zener diode protection features of gate-to-source zener diodes the built-in back-to-back zener diodes have specifically been designed to enhance not only the devices esd capability, but also to make them safely absorb possible voltage transients that may occasionally be applied from gate to souce. in this respect the zener voltage is appropriate to achieve an efficient and cost- effective intervention to protect the devices integrity. these integrated zener diodes thus avoid the usage of external components. symbol parameter value unit to-220 / d 2 pa k / i 2 pa k to-220fp v ds drain-source voltage (v gs = 0) 600 v v dgr drain-gate voltage (r gs = 20 k w ) 600 v v gs gate- source voltage 30 v i d drain current (continuous) at t c = 25c 7 7 (*) a i d drain current (continuous) at t c = 100c 4.4 4.4 (*) a i dm ( l ) drain current (pulsed) 28 28 (*) a p tot total dissipation at t c = 25c 125 30 w derating factor 1 0.24 w/c v esd(g-s) gate source esd(hbm-c=100pf, r=1.5k w) 4000 v dv/dt (1) peak diode recovery voltage slope 4.5 v/ns v iso insulation withstand voltage (dc) - 2500 v t j t stg operating junction temperature storage temperature -55 to 150 -55 to 150 c c to-220 i 2 pak d 2 pa k to- 220fp rthj-case thermal resistance junction-case max 1 4.16 c/w rthj-pcb thermal resistance junction-pcb max (when mounted on minimum footprint) 30 c/w rthj-amb thermal resistance junction-ambient max 62.5 c/w t l maximum lead temperature for soldering purpose 300 c symbol parameter max value unit i ar avalanche current, repetitive or not-repetitive (pulse width limited by t j max) 7a e as single pulse avalanche energy (starting t j = 25 c, i d = i ar , v dd = 50 v) 235 mj symbol parameter test conditions min. typ. max. unit bv gso gate-source breakdown voltage igs= 1ma (open drain) 30 v .com .com .com .com .com 4 .com u datasheet
3/13 stp9nk60z / STP9NK60ZFP / stb9nk60z / stb9nk60z-1 electrical characteristics (tcase =25c unless otherwise specified) on/off dynamic switching on switching off source drain diode note: 1. pulsed: pulse duration = 300 s, duty cycle 1.5 %. 2. pulse width limited by safe operating area. 3. c oss eq. is defined as a constant equivalent capacitance giving the same charging time as c oss when v ds increases from 0 to 80% v dss . symbol parameter test conditions min. typ. max. unit v (br)dss drain-source breakdown voltage i d = 1 ma, v gs = 0 600 v i dss zero gate voltage drain current (v gs = 0) v ds = max rating v ds = max rating, t c = 125 c 1 50 a a i gss gate-body leakage current (v ds = 0) v gs = 20v 10 a v gs(th) gate threshold voltage v ds = v gs , i d = 100a 3 3.75 4.5 v r ds(on) static drain-source on resistance v gs = 10v, i d = 3.5 a 0.85 0.95 w symbol parameter test conditions min. typ. max. unit g fs (1) forward transconductance v ds = 15 v , i d = 3.5 a 5.3 s c iss c oss c rss input capacitance output capacitance reverse transfer capacitance v ds = 25v, f = 1 mhz, v gs = 0 1110 135 30 pf pf pf c oss eq. (3) equivalent output capacitance v gs = 0v, v ds = 0v to 480 v 72 pf symbol parameter test conditions min. typ. max. unit t d(on) t r turn-on delay time rise time v dd = 300 v, i d = 3.5 a r g = 4.7 w v gs = 10 v (resistive load see, figure 3) 19 17 ns ns q g q gs q gd total gate charge gate-source charge gate-drain charge v dd = 480 v, i d = 7 a, v gs = 10v 38 7 21 53 nc nc nc symbol parameter test conditions min. typ. max. unit t d(off) t f turn-off delay time fall time v dd = 300 v, i d = 3.5 a r g =4.7 w v gs = 10 v (resistive load see, figure 3) 43 15 ns ns t r(voff) t f t c off-voltage rise time fall time cross-over time v dd = 300 v, i d = 7 a, r g =4.7 w, v gs = 10v (inductive load see, figure 5) 11 8 20 ns ns ns symbol parameter test conditions min. typ. max. unit i sd i sdm (2) source-drain current source-drain current (pulsed) 7 28 a a v sd (1) forward on voltage i sd = 7 a, v gs = 0 1.6 v t rr q rr i rrm reverse recovery time reverse recovery charge reverse recovery current i sd = 7 a, di/dt = 100a/s v dd = 30v, t j = 150c (see test circuit, figure 5) 480 3.5 14.5 ns c a .com .com .com .com .com 4 .com u datasheet
stp9nk60z / STP9NK60ZFP / stb9nk60z / stb9nk60z-1 4/13 thermal impedance for to-220/d2pak/i2pak safe operating area for to-220fp safe operating area for to-220/d2pak/i2pak thermal impedance for to-220fp output characteristics transfer characteristics .com .com .com .com .com 4 .com u datasheet
5/13 stp9nk60z / STP9NK60ZFP / stb9nk60z / stb9nk60z-1 normalized on resistance vs temperature capacitance variations gate charge vs gate-source voltage static drain-source on resistance transconductance normalized gate threshold voltage vs temp. .com .com .com .com .com 4 .com u datasheet
stp9nk60z / STP9NK60ZFP / stb9nk60z / stb9nk60z-1 6/13 maximum avalanche energy vs temperature normalized bvdss vs temperature source-drain diode forward characteristics .com .com .com .com .com 4 .com u datasheet
7/13 stp9nk60z / STP9NK60ZFP / stb9nk60z / stb9nk60z-1 fig. 5: test circuit for inductive load switching and diode recovery times fig. 4: gate charge test circuit fig. 2: unclamped inductive waveform fig. 1: unclamped inductive load test circuit fig. 3: switching times test circuit for resistive load .com .com .com .com .com 4 .com u datasheet
stp9nk60z / STP9NK60ZFP / stb9nk60z / stb9nk60z-1 8/13 dim. mm inch min. typ. max. min. typ. max. a 4.40 4.60 0.173 0.181 c 1.23 1.32 0.048 0.051 d 2.40 2.72 0.094 0.107 d1 1.27 0.050 e 0.49 0.70 0.019 0.027 f 0.61 0.88 0.024 0.034 f1 1.14 1.70 0.044 0.067 f2 1.14 1.70 0.044 0.067 g 4.95 5.15 0.194 0.203 g1 2.4 2.7 0.094 0.106 h2 10.0 10.40 0.393 0.409 l2 16.4 0.645 l4 13.0 14.0 0.511 0.551 l5 2.65 2.95 0.104 0.116 l6 15.25 15.75 0.600 0.620 l7 6.2 6.6 0.244 0.260 l9 3.5 3.93 0.137 0.154 dia. 3.75 3.85 0.147 0.151 l6 a c d e d1 f g l7 l2 dia. f1 l5 l4 h2 l9 f2 g1 to-220 mechanical data p011c .com .com .com .com .com 4 .com u datasheet
9/13 stp9nk60z / STP9NK60ZFP / stb9nk60z / stb9nk60z-1 l2 a b d e h g l6 f l3 g1 123 f2 f1 l7 l4 l5 dim. mm. inch min. typ max. min. typ. max. a 4.4 4.6 0.173 0.181 b 2.5 2.7 0.098 0.106 d 2.5 2.75 0.098 0.108 e 0.45 0.7 0.017 0.027 f 0.75 1 0.030 0.039 f1 1.15 1.5 0.045 0.067 f2 1.15 1.5 0.045 0.067 g 4.95 5.2 0.195 0.204 g1 2.4 2.7 0.094 0.106 h 10 10.4 0.393 0.409 l2 16 0.630 l3 28.6 30.6 1.126 1.204 l4 9.8 10.6 .0385 0.417 l5 2.9 3.6 0.114 0.141 l6 15.9 16.4 0.626 0.645 l7 9 9.3 0.354 0.366 ? 3 3.2 0.118 0.126 to-220fp mechanical data .com .com .com .com .com 4 .com u datasheet
stp9nk60z / STP9NK60ZFP / stb9nk60z / stb9nk60z-1 10/13 1 dim. mm. inch min. typ max. min. typ. max. a 4.4 4.6 0.173 0.181 a1 2.49 2.69 0.098 0.106 a2 0.03 0.23 0.001 0.009 b 0.7 0.93 0.027 0.036 b2 1.14 1.7 0.044 0.067 c 0.45 0.6 0.017 0.023 c2 1.23 1.36 0.048 0.053 d 8.95 9.35 0.352 0.368 d1 8 0.315 e 10 10.4 0.393 e1 8.5 0.334 g 4.88 5.28 0.192 0.208 l 15 15.85 0.590 0.625 l2 1.27 1.4 0.050 0.055 l3 1.4 1.75 0.055 0.068 m 2.4 3.2 0.094 0.126 r 0.4 0.015 v2 0 o8o d 2 pak mechanical data 3 .com .com .com .com .com 4 .com u datasheet
11/13 stp9nk60z / STP9NK60ZFP / stb9nk60z / stb9nk60z-1 dim. mm inch min. typ. max. min. typ. max. a 4.4 4.6 0.173 0.181 a1 2.49 2.69 0.098 0.106 b 0.7 0.93 0.027 0.036 b2 1.14 1.7 0.044 0.067 c 0.45 0.6 0.017 0.023 c2 1.23 1.36 0.048 0.053 d 8.95 9.35 0.352 0.368 e 2.4 2.7 0.094 0.106 e 10 10.4 0.393 0.409 l 13.1 13.6 0.515 0.531 l1 3.48 3.78 0.137 0.149 l2 1.27 1.4 0.050 0.055 l l1 b2 b d e a c2 c a1 l2 e p011p5/e to-262 (i 2 pak) mechanical data .com .com .com .com .com 4 .com u datasheet
stp9nk60z / STP9NK60ZFP / stb9nk60z / stb9nk60z-1 12/13 tape and reel shipment (suffix t4)* tube shipment (no suffix)* d 2 pak footprint * on sales type dim. mm inch min. max. min. max. a 330 12.992 b 1.5 0.059 c 12.8 13.2 0.504 0.520 d 20.2 0795 g 24.4 26.4 0.960 1.039 n 100 3.937 t 30.4 1.197 base qty bulk qty 1000 1000 reel mechanical data dim. mm inch min. max. min. max. a0 10.5 10.7 0.413 0.421 b0 15.7 15.9 0.618 0.626 d 1.5 1.6 0.059 0.063 d1 1.59 1.61 0.062 0.063 e 1.65 1.85 0.065 0.073 f 11.4 11.6 0.449 0.456 k0 4.8 5.0 0.189 0.197 p0 3.9 4.1 0.153 0.161 p1 11.9 12.1 0.468 0.476 p2 1.9 2.1 0.075 0.082 r 50 1.574 t 0.25 0.35 0.0098 0.0137 w 23.7 24.3 0.933 0.956 tape mechanical data .com .com .com .com .com 4 .com u datasheet
13/13 stp9nk60z / STP9NK60ZFP / stb9nk60z / stb9nk60z-1 information furnished is believed to be accurate and reliable. however, stmicroelectronics assumes no res ponsibility for the consequences of use of such information nor for any infringement of patents or other rights of third parties which may result f rom its use. no license is granted by implication or otherwise under any patent or patent rights of stmicroelectronics. specificati ons mentioned in this publication are subject to change without notice. this publication supersedes and replaces all information previously supplied. stmicroelectronics products are not authorized for use as critical components in life support devi ces or systems without express written approval of stmicroelectronics. ? the st logo is a registered trademark of stmicroelectronics ? 2002 stmicroelectronics - printed in italy - all rights reserved stmicroelectronics group of companies australia - brazil - canada - china - finland - france - germany - hong kong - india - israel - italy - japan - malaysia - malt a - morocco singapore - spain - sweden - switzerland - united kingdom - united states. ? http://www.st.com .com .com .com .com 4 .com u datasheet

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